Innoscience, founded in 2015 and headquartered in Suzhou, China, is the world’s largest GaN-on-Si IDM, offering advanced 8-inch GaN technology and a broad range of power devices and ICs.
Product lineup
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GaN HEMT
The product lineup covers a broad voltage range from 30V–200V up to 650V–1200V.
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GaN IC
Products featuring integrated protection functions and built-in gate drivers.
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Driver IC
Driver ICs specifically designed for GaN HEMTs.
Overview of Innoscience Technology
Innoscience TechnologyChina
Innoscience, founded in 2015 and headquartered in Suzhou, China, is the world’s largest GaN-on-Si IDM. It develops GaN power devices and ICs using 8-inch technology, with facilities in Suzhou and Zhuhai and offices worldwide. Listed on HKEX in 2024, it leads the GaN power semiconductor market.Inquiry on the products
Reception hours: Weekdays 9:00-17:30
(excluding Saturdays, Sundays, holidays, and company-designated holidays)